jyoti Shettar

• Managed and motivated employees to be productive and guiding the team members implement leaf layout of leaf cells
• Enhanced team productivity by providing training on advanced layout tools and methodologies.
• Help team in debugging and resolving all the verifications.
• Maximized performance by monitoring daily activities and mentoring team members.
• coordinating with designers to understand the design requirement.
• coordinating with PDK team in the development of new technology and reporting the issues we are seeing
• Development of new IP's FLASH memory Bank and Flash charge Pump in T28 technology
• Delivering BANK and PUMP of different sizes and making necessary updates in the layout as per schematic changes in older technologies on time.

• Hired, trained and mentored staff to maximize effectiveness.
• Coordinating with designers in Israel, Germany, USA to understand design requirement.
• Implement layout blocks like Memory, PLL, Charge Pump from scratch in 10nm , 7nm technologies

• Managed multiple projects like Memory, Transmitter and receiver simultaneously, meeting tight deadlines without compromising on quality.
• Implemented Layout in 16nm and 14nm technologies from scratch.
• Well planning on Floor plan, routing and integrating the blocks till the top level, and then top level verifications like DRC, LVS, Antenna, IR, EMIR. Took care of Latchup, cross coupling issues. Shielding necessary signals, and calculating metal width based on the current requirement.

• Maintained up-to-date knowledge about industry trends, advancements in technology, and emerging challenges within the analog layout domain.
• Involved in the layout of Pitch matched Senseamp layout, and other drivers used in the FLASH Memory bank.
• Delivered optimal solutions for complex routing problems through meticulous planning and innovative approaches.
• Reduced design cycle time with effective floor planning and placement strategies for complex circuits.

Worked closely with Senior designer to understand the design requirement and involved in the layout of Chargepump , Resistance requirement from BOND pad to the pin was 1 OHM and calculated the metal width based on requirement and also look care of electromigration since the nets were carrying large currents.

Executed same project in 120 nm technology.