Ruby Khan

I am deeply passionate about participating in scientific and technological discussions, particularly within the realms of materials science and semiconductors. My enthusiasm is matched by a robust expertise in semiconductor epitaxy, characterization, and fabrication, skills I am eager to contribute to your team.

1. Ruby Khan, Rajesh K. Bag, Kapil Narang, Akhilesh Pandey, Sandeep Dalal, Vikash K. Singh, Sachin K. Saini, M. V. G. Padmavati, Renu Tyagi & Ufana Riaz, Effect of fully strained AlN nucleation layer on the AlN/SiC interface and subsequent GaN growth on 4H–SiC by MOVPE. J Mater Sci: Mater Electron 30, 18910–18918 (2019).
2. Kapil Narang, Rajesh K. Bag, Vikash K. Singh, Akhilesh Pandey, Sachin K. Saini, Ruby Khan, Aman Arora, M. V. G. Padmavati, Renu Tyagi & Rajendra Singh, Improvement in surface morphology and 2DEG properties of AlGaN/GaN HEMT. J. Alloys Compd. 815, 152283-152289 (2020).
3. Ruby Khan, Aman Arora, Anubha Jain, Brajesh S. Yadav, Jaya Lohani, Anshu Goyal, Kapil Narang, Garima Upadhyaya, Vikash K. Singh, Sachin K Saini, R. Raman, M. V. G. Padmavati, Renu Tyagi, Rajesh K Bag & Ufana Riaz, Impact of growth conditions on intrinsic carbon doping in GaN layers and its effect on blue and yellow luminescence. J Mater Sci: Mater Electron 31, 14336–14344 (2020).
4. Ruby Khan, Kapil Narang, Aman Arora, M. V. G. Padmavati, Renu Tyagi, Rajesh K. Bag, & Ufana Riaz, Improvement in the Crystalline Quality of GaN and Defects Analysis using Cathodoluminescence. J. Mater Today: Proceedings 36, 631-636 (2021).
5. Ruby Khan, Kapil Narang, M. V. G. Padmavati, Renu Tyagi, Rajesh K. Bag, & Ufana Riaz, Investigation and optimization of AlN nucleation layers grown on 4H-SiC by MOCVD. J. Mater Today: Proceedings 36, 637-641 (2021).
6.  Ruby Khan, Ajay Kumar Visvkarma, Kapil Narang, Rajesh K. Bag, M.V.G. Padmavati, Renu Tyagi & Ufana Riaz, Comparative study of polymer based novel organic-inorganic hetero-junctions with n- GaN and AlGaN/GaN epi-structures. Mater. Sci. Eng. B. 272, 115364 (2021).
7. Kapil Narang, Ruby Khan, Akhilesh Pandey, Rajesh K. Bag, M. V. G. Padmavati, Renu Tyagi & Rajendra Singh, Investigation of carrier gas on morphological and structural characteristics of AlGaN/GaN HEMT. Mater. Res. Bull. 153, 111875 (2022).
8. Kapil Narang, Akhilesh Pandey, Ruby Khan, Vikash K. Singh, Rajesh K. Bag, M. V. G. Padmavati, Renu Tyagi & Rajendra Singh, High quality AlN nucleation layer on SiC substrate grown by MOVPE: Growth, structural and optical characteristics. Mater. Sci. Eng. B. 278, 115635 (2022).
9. Kapil Narang, Akhilesh Pandey, Vikash K. Singh, Ruby Khan, Rajesh K. Bag, M. V. G. Padmavati, Renu Tyagi & Rajendra Singh, Suitability of thin-GaN for AlGaN/GaN HEMT material and device. J. Mater. Sci. 57, 5913 (2022).
10. Ruby Khan, Kapil Narang, Rajesh K. Bag, D. V. Sridhara Rao, Vajinder Singh, M.V.G Padmavati, Renu Tyagi & Ufana Riaz, Dislocation reduction in GaN epi-layer by controlling the surface microstructure of the AlN islands grown on sapphire by MOVPE (Manuscript is ready).

• Dr. Renu Tyagi, Solid State Physics Laboratory (SSPL), DRDO, renutyagi@sspl.drdo.in
• Dr. Rajesh K. Bag, Solid State Physics Laboratory (SSPL), DRDO, rajeshkb@sspl.drdo.in
• Prof. Srinivasan Raghavan, CENSE, IISc (Indian Institute of Science), sraghavan@iisc.ac.in

• English
• Hindi
• Urdu

• Date of Birth: 12/01/93
• Nationality: Indian
• Marital Status: Married

• I am supposed to join as a research scientist at SSPL, a DRDO's lab on contractual basis.