A highly experienced VLSI leader with over 22 years of experience in Managing Platform development including Logic, Memory and Leading interface/IO, ESD and Analog & Mixed signal products development. Proven track record of leading cross-functional teams to deliver high-quality results on time and within budget. Strong technical knowledge of interface/IO design and optimization, signal integrity, and power distribution. Skilled communicator and collaborator with a focus on building strong relationships with team members, stakeholders, and customers.
• Successful completion of Samsung platforms (11LPP, 14LPP, 14LPU, etc) development including various logic, Memory and IO products
• Leading development of various Interface/IO products, like GPIO and high frequency Speciality IO (like DDR, LVDS, LPDDR, subLVDS, USB, I2C, etc)
• Architect for various IO products and build culture of innovations within the team.
• Silicon experience with all major foundries (like TSMC, Samsung, GF and other Foundries as well) involving in various technology nodes (from 180nm to latest 3nm)
• Successfully build products from various leading customer requirements to a specific application and end-product (like Client/Mobile, Automotive, Infrastructure and IOT/Low Power)
• Deeply involved in building ESD protection architecture and packaging requirements and constraints for Interface/IO products.
• Leading and managing IO, Analog and Mixed Signal (AMS) product team (globally) across different design centers and cross-functional teams to deliver high-quality products.
• Leading product specific steering and working groups for planning and building product architectures, workflows, policies, methodologies, development flows and EDA requirements.
• Pro-active contribution in pre-sales, marketing, commercial and customer interactions to successfully convert requirements to deliver silicon qualified products.
• Actively involved in driving Testchip and silicon test and PFA (Physical FA) requirements and methodologies for Logic, Memory, IO, ESD and AMS products
• Maintained up-to-date knowledge of industry standards, policies and regulations and ensured team compliance.
• Collaborated with stakeholders, including customers, vendors, and internal teams, to ensure successful product delivery and customer satisfaction.
• Design experience of Dual Port SRAM products, involving Architecture, bitcell analysis, IO Buffer design, Row/column redundancy and Full Chip Functional & timing Simulations
• Involved in silicon qualification and debug of SRAM products.
• Build Verilog models for SRAM products and completed with full verification.
• Actively involved and completed full chip simulations of Zero delay buffer including PLL and LVCMOS Input Receiver and Output Buffer.
Leading major Samsung foundry platforms including Logic, memory, and IO products
undefined• General purpose Receiver. Patent Number: 9831855, Granted in 2017
• Output signal generation circuitry for converting an input signal from a source voltage domain into an output signal for a destination voltage domain, Patent Number: 9806716, Granted in 2017
• Receiver circuitry and method for converting an input signal from a source voltage domain into an output signal for a destination voltage domain, Patent Number: 10340917, Granted in 2018
• Electrostatic discharge protection circuitry, Patent Number: 9893517, Granted in 2018
• Overdrive receiver circuitry, Patent Number: 9966955, Granted in 2018
• Voltage level shifting circuitry, Patent Number: 10784842, Granted in 2020
• Circuit for controlling shape of a driver signal waveform, Patent Number:10516386, Granted in 2019
• System, method and apparatus for a single input/output cell layout, Patent Number: 10811375, Granted in 2020
• Core ramp detection circuitry, Patent Number: 11169590, Granted in 2021
• Dynamic biasing techniques, Patent Number: 11422581, Granted in 2022