Godwinraj D

Strategic 10-Year Vision

Key Credentials:

Research: 28 SCI Publications | Pursuing Postdoc at JCU | Ph.D. (10.0 CGPA)

Industry Tools: Mastered Synopsys, Cadence, Siemens, Keysight, Ansys.

Leadership: PI for Govt. of India Chip2Startup Program; Worth ₹1.79 Cr+ in funding.

Goal: Driving the "Future-Ready" transformation of technical education through Neuromorphic AI devices and VLSI design.

Vision: Aligning curriculum and faculty recruitment with the shift to Agentic and Physical AI, developing hardware-level "intelligence-on-chip" to solve complex societal challenges over the next decade.

• IEEE Member
• IEI Member and Chartered Engineer

Workshops/STTP/FDP Organized

• Five-Day Chip2Startup FDP (May 2026): "Device to VLSI and Circuit Implementation," held at Amal Jyothi College of Engineering.

      Focus: Mastery of Synopsys Device - VLSI and industrial PCB Design tools. Resource Person: Dr. Godwinraj.

• Device to VLSI: Tools, Techniques & Real World Applications (Resource Person/Coordinator) Date: 22 Sept 2025 – 21 Oct 2025 Directed a one-month intensive internship at AJCE covering CMOS, FinFET, and HEMT design using Sentaurus TCAD. Guided students through the full flow from device physics and DC/AC response analysis to PDK creation and project submission. Resource Person: Dr. Godwinraj.
• Device to VLSI: Tools, Techniques & Real World Applications – Phase II (Resource Person/Coordinator) Date: 12 Jan 2026 – 11 Feb 2026 Managed the second phase of the C2S internship focusing on high-performance HEMT and sensor design for real-world hardware. Supervised hands-on training on Zynq Zed Boards and advanced Synopsys EDA tools for system-level VLSI implementation. Resource Person: Dr. Godwinraj.
• Digital IC Design: RTL to GDSII Layout Generation (Coordinator) Date: 01 Dec 2025 – 09 Dec 2025 Coordinated a one-week C2S workshop at AJCE covering the full ASIC design flow from RTL coding to GDSII layout generation. Utilized Synopsys Fusion Compiler and advanced EDA tools to provide hands-on training in logic synthesis and back-end signoff. Resource Person: Dr. Godwinraj.
• Coordinator-Conduct of Five-days APJAKTU sponsored Faculty development Program on “Biomedical Instrumentation-Research Challenges” held on 22-26 February2021 at Amal Jyothi College of Engineering, Kanjirappally, Kottayam.
• 1 “ONE WEEK STTP ON DEEPLEARNING FORCOMPUTER VISION MEDICAL APPLICATIONS” organized by Department of Computer Science and Engineering College, NARASARAOPETA ENGINEERING COLLEGE during 22nd to 27thMarch, 2021.
• 2 Participated &completed successfully AICTE Training And Learning (ATAL) Academy Online Elementary FDP on "Photonics: Fundamentals & Applications" from2021-06-28to2021-07-02atSamarat Ashok Technological Institute.
• 3 Participated &completed successfully AICTE Training And Learning (ATAL) Academy Online Elementary FDP on "QUANTUMCOMPUTING" from2021-06-21to2021-06-25atGOVERNMENT COLLEGE OF ENGINEERING.
• 4 Participated & completed successfully AICTE Training And Learning (ATAL) Academy Online Elementary FDP on "An insight to Biomedical Instrumentation, Biomedical Signal and Image Processing with hands on experience and LabVIEW Programming" from02/08/2021to06/08/2021at Poojya Doddappa Appa College of Engineering, Kalaburagi.

Conference: 

1.C. Sreeja and D. Godwinraj, "Bouc-Wen Hysteresis Modelling and Tracking Control of Piezoelectric Actuator for Precision Nano-Positioning Systems in Healthcare," in Industry 5.0 for Smart Healthcare Technologies, CRC Press, pp. 217-226, Aug. 2024.

2. C. Sreeja and D. Godwinraj, "Precision Control and Hysteresis Modeling of Piezoelectric Nano-Positioning Systems for Enhanced Healthcare Applications," 2024 5th International Conference for Emerging Technology (INCET), IEEE, pp. 1-5, May 2024.

3. C. Sreeja and D. Godwinraj, "Robust Control of Precision Nano-Positioning System for Microsurgical Applications," International Conference on ICT for Digital, Smart, and Sustainable Development, Springer Nature Singapore, pp. 493-505, Apr. 2024.

4. D. Godfrey et al., "Investigation of AlGaN/GaN HEMT Breakdown analysis with Source field plate length for High power applications," 2020 IEEE 5th International Conference on Devices, Circuits and Systems (ICDCS), Coimbatore, India, 2020, pp. 244-246, doi: 10.1109/ICDCS48716.2020.243589.

5. G. D, D. Nirmal, A. L, G. D, N. M. Kumar and W. K. Yeh, "Strain-Induced Ionic Polarization Dependent AlGaN/GaN High Electron Mobility Transistor," 2020 4th IEEE International Conference on Trends in Electronics and Informatics (ICOEI)(48184), Tirunelveli, India, 2020, pp. 463-466, doi: 10.1109/ICOEI48184.2020.9142918.

6 Babitha Babu, D. Godwinraj, “Performance Evaluation of Single Layer and Multi Layer Graphene Sheet Transistors”, Proceedings of the Annual International Conference on Emerging Research Areas (AICERA 2019), July 18-20, 2019, Kottayam, Kerala.

7 Godwin Raj, Chandan Kumar Sarkar

Effect of 5-doped AlGaAs/InGaAs/InGaAs/GaAs Pseudomorphic HEMT for power devices

Elsevier Proceedings, ICPVS - 2014, Vol 1, Page 13-16, 2014, ISBN 978-93-5107-228-7.

8 Godwin Raj, Hemant M Pardeshi, Sudhansu Pati, N Mohankumar, Chandan Kumar Sarkar, “DC and Breakdown voltage analysis of 27 nm gatelength AlGaAs/InGaAs HEMT” IEEE conference on Electron devices, 2012, SKP Engineering college, Tiruvannamalai.

9 Mr.D.Godwin Raj, Dr.N.MohanKumar,"Simulation-Based Study of III-V(InSb) HEMTs Device Physics for High-Speed Low-Power Logic Applications, Engineering Post Graduate Research Conference 2011, ENGGPOS-2011, Bannari Amman Inst. of Technology, Sathyamangalam.

10 Srivastava, Srishti, Sanjit kumar Swain, Godwin Raj, Chandan Kumar Sarkar, and Sarosij Adak. "Performance analysis of T-Gate Enhancement mode n GaN/InAlN/AlN/GaN HEMT." 2016, IEEE International Conference on Innovations in information, Embedded and Communication Systems (ICIIECS), Jadavpur University, Kolkata.

11 Srivastava, Srishti, Sanjit kumar Swain, Godwin Raj, and Chandan Kumar Sarkar. "Microwave characteristics of 100nm AlGaN back barrier Gate Recessed Enhancement mode InAlN/AlN/GaN HEMT." 2016, IEEE International Conference on Innovations in information, Embedded and Communication Systems (ICIIECS), Jadavpur University, Kolkata.

12 S. Adak, S. K. Swain, G. Raj, H. Rahaman and C. K. Sarkar, "Performance analysis of gate material engineering in enhancement mode n++GaN/InAlN/AlN/GaN HEMTs," 2016 IEEE 3rd International Conference on Devices, Circuits and Systems (ICDCS), Coimbatore, 2016, pp. 89-92. doi: 10.1109/ICDCSyst.2016.7570631

13 S. K. Swain, S. Adak, A. Dutta, G. Raj and C. K. Sarkar, "Impact of high K layer material on Analog/RF performance of forward and reversed Graded channel Gate Stack DGMOSFETs," 2016 IEEE 3rd International Conference on Devices, Circuits and Systems (ICDCS), Coimbatore, 2016, pp. 98-102. doi: 10.1109/ICDCSyst.2016.7570633

1. [Accepted – May 2026] D. Godwinraj, "Impact of Geometrical Parameters on Sensitivity and Selectivity in InGaN Notch-Engineered AlGaN/GaN MOSHEMT Biosensor," Microsystem Technologies, Springer Nature.

2. D. Godwinraj, D. Godfrey, P. Sundararaman, and V. Nandagopal, "Impact on Breakdown Voltage for AlGaN Channel E-HEMT Device used with the DC Boost Converter Circuit," International Journal of Electrical and Electronics Research (IJEER), vol. 13, no. 1, pp. 50-54, Mar. 2025. 

3. Chen, Yu-Lin; Yeh, Godwinraj D, Wen-Kuan;et. al."Hot Carrier Injection Reliability ofFabricated N- and P-Type Multi FinFETs with Different TiN Stacks" ECS Journal of Solid StateScience and Technology, IOP Science, April 2023.

4 Chen, Yu-Lin; Yeh, Godwinraj D, Wen-Kuan; et. al. "Hot Carrier Injection (HCI) Reliability of Fabricated Y-gate HEMT with Various Top Length" Solid State Science and Technology, Elsevier, Mar 2023.

5 YL., Yeh., Godwinraj D, Chen WK., Hsu, HT. et al. “The Impact of Hot Carrier Injection- Induced Device Degradation for Lower-Power FinFETs” J. Electron. Materials. 52, 1391–1399, Jan 2023.

6 Godfrey, D., Godwinraj D, Nirmal, D., Arivazhagan, L., Kumar, N. M., Chen, Y., & Yeh, W. (Dec 2021). Current collapse degradation in GaN High Electron Mobility Transistor by virtual gate. Microelectronics Journal, 118, 105293.

7 Godwinraj, D., and Soney C. George. "Recent advancement in TENG polymer structures and energy efficient charge control circuits." Advanced Industrial and Engineering Polymer Research 4.1 ( Dec 2021): 1-8.

8 Godfrey, D., Nirmal, D., Godwinraj, D. et al. “Enhancement of DC and Breakdown Performance on Single to Multi-Step Gate FP Using GaN-HEMT for High Power Applications.” Silicon (2020).

9 Mohanbabu, A., Mohankumar, N., Godwin Raj, D., Sarkar, P. and Saha, S.K., 2019. Device characteristics of enhancement mode double heterostructure DH-HEMT with boron-doped GaN gate cap layer for full-bridge inverter circuit. International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 31(3), p.e2276.

10 R. Saravana Kumar, A. Mohanbabu, N. Mohankumar & D. Godwin Raj (2018) “Simulation of InGaAs subchannel DG-HEMTs for analogue/RF applications, International Journal of Electronics, 105:3, 446-456, DOI: 10.1080/00207217.2017.1376354 IMPACT FACTOR : 0.8

11 A. Mohanbabu, D. Godwin Raj, Partha Sarkar, FInvestigation of enhancement mode HfO2 insulated N-polarity GaN/InN/GaN/In0.9Al0.1N heterostructure MISHEMT for high-frequency applications, Physica E: Low-dimensional Systems and Nanostructures, Volume 92, August 2017, Pages 23-29, ISSN 1386-9477

12 A. Mohanbabu, N. Mohankumar, D. Godwin Raj, Partha Sarkar, Samar K. Saha, “Efficient III-nitride MIS-HEMT devices with high-k gate dielectric for high-power switching boost converter circuits”, Superlattices and Microstructures, Volume 103, March 2017, Pages 270-284, ISSN 0749-6036

13 Kumar, R. S., Mohanbabu, A., Mohankumar, N., & Godwinraj, D. (2017). “In0.7Ga0.3As/InAs/In0.7Ga0.3As composite-channel double-gate (DG)-HEMT devices for high-frequency applications”. JOURNAL OF COMPUTATIONAL ELECTRONICS, 16(3), 732-740. IMPACT FACTOR : 0.8

14 Godwinraj D, Mohan kumar, Chandan K. Sarkar, “Polarization and carrier density model for AlGaN channel with AlN buffer for Low Al composition,” WORLD JOURNAL OF CONDENSED MATTER PHYSICS journal, Scientific World Publishers, Accepted for Publication. Mar. 2015.IMPACT FACTOR : 0.8

15 GodwinRaj, D., &Sarkar, C. K. (2015). Threading Dislocation Degradation of InSb to InAsSbSubchannel Double Heterostructures, Electron Material Letters, 1-6. doi:10.1007/s13391- 015-4330-8.IMPACT FACTOR : 4.0

16 GodwinRaj, D., Pardeshi, H., Pati, S. K., &Mohankumar, N. (2012). physics based charge and drain current model for algan/ganhemt devices, Journal of Electron devices, 14, 1155-1160.

17 Godwinraj, D., Pardeshi, H., Pati, S. K., Mohankumar, N., &Sarkar, C. K. (2013). Polarization based charge density drain current and small-signal model for nano-scale AlInGaN/AlN/GaN HEMT devices, Superlattices and Microstructures, 54(1), 188-203. doi:10.1016/j.spmi.2012.11.020, IMPACT FACTOR : 2.0

18 Baskaran, S., Mohanbabu, A., Anbuselvan, N., Mohankumar, N., Godwinraj, D., &Sarkar, C. K. (2013). Modeling of 2DEG sheet carrier density and DC characteristics in spacer based AlGaN/AlN/GaN HEMT devices. Superlattices and Microstructures, 64, 470-482. doi:10.1016/j.spmi.2013.10.019, IMPACT FACTOR : 2.0

19 Mohanbabu, A., Anbuselvan, N., Mohankumar, N., Godwinraj, D., &Sarkar, C. K. (2014). “Modeling of sheet carrier density and microwave frequency characteristics in Spacer based AlGaN/AlN/GaNHEMT devices” Solid-State Electronics, 91, 44-52, doi:10.1016/j.sse.2013.09.009, IMPACT FACTOR : 1.5

20 Pardeshi, H., Kumar Pati, S., Raj, G., Mohankumar, N., & Kumar Sarkar, C. (2012). “Investigation of asymmetric effects due to gate misalignment, gate bias and underlap length in III-V heterostructureunderlap DG MOSFET” Physica E: Low-Dimensional Systems and Nanostructures, 46, 61-67.

21 Pardeshi, H. M., Raj, G., Pati, S., Mohankumar, N., &Sarkar, C. K. (2013). “Performance assessment of gate material engineered AlInN/GaN underlap DG MOSFET for enhanced carrier transport efficiency” Superlattices and Microstructures, 60, 10-22.

22 Pardeshi, H., Pati, S. K., Raj, G., Mohankumar, N., &Sarkar, C. K. (2012). Effect of underlap and gate length on device performance of an AlInN/GaNunderlap MOSFET” Journal of Semiconductors, 33(12), 124001.

23 Pardeshi, H., Raj, G., Pati, S. K., Mohankumar, N., &Sarkar, C. K. (2012). Comparative assessment of III-V heterostructure and silicon underlap double gate MOSFETs. Semiconductors, 46(10), 1299-1303.

24 Pardeshi, H., Sarkar, A., Mohankumar, N., Raj, G., &Sarkar, C. K. (2012). Effect of Barrier layer thickness on device performance of AlInN/GaNunderlap DG MOSFET. Proceedings of the 2012 International Conference on Communications, Devices and Intelligent Systems, CODIS 2012, 60, 441-444.

25 Pati, S. K., Pardeshi, H., Raj, G., Mohan Kumar, N., &Sarkar, C. K. (2013). Impact of gate length and barrier thickness on performance of InP/InGaAs based Double Gate Metal- OxideSemiconductor Heterostructure Field-Effect Transistor (DG MOS-HFET). Superlattices and Microstructures, 5(1), 8-15.

26 Pati, S. K., Pardeshi, H., Raj, G., Mohankumar, N., &Sarkar, C. K. (2013). Flicker and thermal noise in an n-channel underlap DG FinFET in a weak inversion region. Journal of Semiconductors, 34(2), 024002.

27 Jebalin, B. K., ShobhaRekh, a., Prajoon, P., Godwinraj, D., Mohan Kumar, N., &Nirmal, D. (2015). Unique model of polarization engineered AlGaN/GaN based HEMTs for high power applications. Superlattices and Microstructures, 78, 210-223.

• Title Advanced Heterostructure Devices for Power Applications.
• Guide Prof. C. K. Sarkar, Prof. N. Mohankumar.
• Description This thesis focused AlGaN/GaN HEMTs like, Single Field Plated (1350 V), Double Field Plated (1590 V), Slanted Field Plated (1900 V) and AlGaN Channel (1800 V), devices achieved high breakdown voltage. Among all, AlGaN channel becomes much attractive because of the better lattice match with barrier and very low on resistance. In this thesis third part, we have analyzed the formation of 2DEG charge density and breakdown voltage (1750 V) characteristics for various alloy compositions in AlGaN barrier and channel interface regions. study of the delta doped AlxIn1-xSb /Al0.24In0.765b/InyAs1-ySb heterostructures to reduce threading Dislocation density. The transport properties have been analyzed by self-consistent Schrodinger-Poisson hydrodynamic model with dislocation density parameter D(x) using TCAD. Offer a wide range of as composition in InAsSb QW with AlxIn1-xSb /Al0.24In0.765b barrier has been investigated. Highest electron mobility of 43000 cm2/Vs, 43500 cm2/Vs and lowest dislocation density of 3.7 x 108/cm2 have been reported for Al0.35In0.655b/Al0.24In0.765b/InyAsSb1-y (y=0.2, 0.3) device composition. It shows that the addition of InAs to InSb with double barrier matrix region reduces dislocation. Hence, we expect enhanced mobility because of the less lattice mismatch compared to AlInSb/InSb heterostructures. Quality epi growth might be expected with this structure for high speed and ultra-low power applications.

• Title III-V(InSb) HEMT Device High Speed Low Power Logic Applications.
• Guide Dr. Mohankumar N.
• Description Intel in collaboration with QinetiQ has successfully demonstrated 200nm and 80nm gate length “quantum well” transistors using indium antimonide. These InSb based transistors could become a promising candidate for making very fast microprocessors in the middle of the next decade. Therefore, InSb based device simulation becomes important in device design and engineering for device performance optimization. However, there are very few reports on InSb based device simulation so far, this study explores the InSb MOSFET simulation based on ISE-TCAD. We investigate the InSb based MOSFET device performance including turn on, turn off current, sub-threshold swing, DIBL.

• 1 Enhanced Autonomous Decision-Making Using Brain AI Closed Loop System
• Institute Amal Jyothi College of Engineering Kanjirappally.
• Scholar Name Praseeda B Nair
• Role Supervisor
• Status Pre comprehensive Exam completed-2023
• 2 A Robust Nano-Positioning Control Algorithm Using Advanced Sliding Mode
• Institute Amal Jyothi College of Engineering Kanjirappally
• Scholar Name Sreeja C S.

• 1. Godwinraj, D., Mohan Kumar N, “III–V Heterostructure Devices for Ultralow-Power, High- Power, and High-Breakdown Applications.” Taylor & Francis Group, CRC Press, 2021, Pages 1-18, 2021.
• 2. Babitha Babu, D. Godwinraj “Performance Evaluation of Single Layer and Multi-Layer Graphene Sheet Transistors”, Emerging Technologies for Sustainability Taylor & Francis Group, CRC Press, Pages 1-8. 2020

• 1. TSRI Taiwan – GaN HEMT Simulation and Experimental Validation for Space Applications (2019 – Till date)
• 2. Sri Chitra Biomedical Research Institute – Dr. Jayashree, Senior scientist, SCTIMST. Non- Invasive Tissue Electrode Strip for All in one (Blood Pressure, Cholesterol, Blood Sugar, and Lactose) Measurement – (2020 to till date)
• 3. Pushpagiri Medical Research Institute – (2019 to till date) Imprint Nano barcode – Dental Applications, Dr. Sunil, Associate Professor, Pushpagiri Dental Research Institute.

• 1 Solid State Science and Technology
• 2 IEEE Transaction on Eelctron Devices
• 3 IEEE Journal of Biomedical and Health Informatics
• 4 Elsevier Microelectronics Journal
• 5 Wiley Electronic Letters
• 6 Elsevier Journal of Biomedical Signal Processing & Control