Summary
Overview
Work History
Education
Skills
Software
Interests
Timeline
Declaration:
Personal information:
Publications:
Punna Venkateshwarlu

Punna Venkateshwarlu

RF MMIC Design Engineer
Bengaluru,Karnataka

Summary

Expertise in MMIC/RFIC design and development of Transmitters and receiver chains for complete radar & communication systems. Analyzing complete link budget for RF and microwave subsystems. Looking for a challenging position as a RF front end design engineer or MMIC Design engineer and Tech lead in a prestigious organization.

As a Professional, I have 18 years of experience in developing various MMIC’s, such as GaN and GaAs Power amplifiers, Low Noise amplifiers and MMIC Mixer, SPNT Switch, Switch filter banks development of Transmitters and Receiver modules for RF Systems. Participated in project proposals, BOM for system level designs. Good Understanding about RF Packaging techniques and having sound knowledge in RF/uW Testing. Developed MMIC’s in GaAs and GaN for Microwave applications from 2 GHz to 86GHz. Experience in dealing with MMIC fab’s like UMS, WIN. Hands on experience with ADS, AWR, HFSS and CST, Cadence, SYMMIC.

Overview

18
18
years of professional experience
4
4
Languages

Work History

Manager

Bharat Electronics
Bengaluru
12.2018 - Current
  • Leading the RF team with 8 associated engineers
  • Budgeting for multi-functional chipsets for RF Front End from S band to Ka Band
  • Development of receiver and transmitter for Radar front ends for Satellite and defense radar applications
  • MMIC Power amplifier with 50Watt output power in Ku Band Using ADS and WIN PDK, Package 3D simulations with thermal Analysis
  • MMIC Power amplifier with 150Watt output power in X Band Using ADS and UMS & CREE PDK, Package 3D simulations with thermal Analysis
  • MMIC Power amplifier with 600Watt output power in S Band Using AWR MW Office and CREE PDK, Package 3D simulations with thermal Analysis
  • MMIC Power amplifier with 15Watt output power in X Band Using ADS and WIN PDK, Package 3D simulations with thermal Analysis
  • RF Budgeting and Identification of Components for Dual Channel Transmitter and Receiver for Microwave radar with thermal design
  • 3D simulation of RF packages for custom Chip scale package requirements

Sr.RF/MMIC Design Engineer

M/S Astrome Technologies Pvt Ltd
Bengaluru, India
08.2017 - 12.2018
  • Responsible for complete RF chain.
  • 32 Channel Transmitter and Receiver development for Satellite communications
  • Complete developing of homodyne receiver at and transmitter At which modulate/demodulate the E band signal to IF directly. The entire RF system has 32 Tx and 32 Rx channels. The complete RF budgeting and identify the components and realizing on multi-layer PCB. As per the space and power requirements this required very highly integrated. So realizing the same transmitter and receiver on SIP.
  • Developing a integrated SIP(transmitter & receiver) modules with a antenna on top of package for 71-86GHz
  • Developed a RF Via At 75GHz
  • MMIC power amplifier and LNA at 71-86 GHz using ADS and UMS PDK

MMIC Design and Testing Engineer

M/S ASTRA Microwave Pvt Ltd
Hyderabad
06.2012 - 07.2017
  • Design and development of 4 Channel Receiver Front End-X Band for missile NIRBHAY.
  • The-4 Channel Receiver Front End-X Band unit is a mono pulse receiver, which receives the signal on X-band with 500Mhz bandwidth and down converts to 1.15GHz having bandwidth of 120Mhz with 30dB conversion gain. The main challenge is faced is to achieve size 65mm X 85mm X 15mm. And phase matching between four channels. Complete responsibility for design (RF budget), development, RF testing and delivery within customer time line
  • Designed X band power amplifier with 16dB gain and 2W power output using WIN foundry in GaAs.
  • Designed 2 – 6 GHz 25Watt PA with 25 dB gain using WIN foundry in GaN
  • 0.5 GHz to 35 GHz distributed amplifier with 17dB gain and 22dBm pout.
  • Balanced amplifier in Ka band (18-40GHz) with 16dB gain and 3.5 dB noise figure
  • Ku band LNA with 26dB gain and 2.4 dB noise figure and 12dBm pout.
  • X band LNA with 30dB gain and 1.2 dB noise figure and 15dBm pout.
  • 0.5 GHz to 20 GHz SPDT with 1.4dB max insertion loss and 40dB min isolation
  • Passives filters and couplers and hybrids with RT duroid and lange couplers

Design Engineer

Research Center Imaratt, DRDO
Hyderabad
06.2008 - 06.2012
  • Design of L band power amplifier with 14dB gain and 10W output power and 68% PAE (using GaN CREE)
  • Designed MMIC Ku band power amplifier for 2W with 15dB gain and 33% PAE.
  • Designed slotted rectangular waveguide antenna at Ku band
  • Design of narrow band Microstrip RF filters ( interdigital and coupled )
  • Developed a RF trans-receiver in ku band with 1-watt power and 45 dB Rx gain.
  • Participated in the system level testing in radio proximity fuze.

Education

Pursuing Part Time Ph.D - IC Design

Ramaiah Applied University, Bengaluru
06.2024

Pursuing part time Ph.D Joined in 2024

  • Continuing education in IC Design
  • Completed professional development courses in NPTEL

Master’s degree spl - Electronics & Communications

Osmania University, Hyderabad
07-2008

Skills

Subsystem designs like RF/Microwave Transmitter & Receiver from 2 GHz to 86 GHz

RFIC/MMIC Design & Multi Functional IC's

Power amplifier design GaN & GaAs

RF Planning & Budgeting & Application circuit Design

Chip scale package design

System in Design

Team Leadership

Software

ADS, Cadance AWR , HFSS, CST , SYMMIC, STAN,VIRTUSO

Interests

BADMINTON, COOKING, MOVIES

Timeline

Manager - Bharat Electronics
12.2018 - Current
Sr.RF/MMIC Design Engineer - M/S Astrome Technologies Pvt Ltd
08.2017 - 12.2018
MMIC Design and Testing Engineer - M/S ASTRA Microwave Pvt Ltd
06.2012 - 07.2017
Design Engineer - Research Center Imaratt, DRDO
06.2008 - 06.2012
Ramaiah Applied University - Pursuing Part Time Ph.D, IC Design
Osmania University - Master’s degree spl, Electronics & Communications

Declaration:

I hereby declare that the details furnished above are true and correct to the best of my knowledge and belief and I undertake to inform you of any changes therein, immediately.

Personal information:

  • Address: P.venkateshwarlu, 17, 15th main road, 15th C Cross, Muthyala nagar, Mathikere, Yashwanthapura, Bengaluru, PIN-560045
  • Date of birth: 1986-06-18
  • Marital status: Married
  • National: Indian

Publications:

  • A 2Watt Ku-band MMIC power amplifier design- IEEE Conference 2011
  • C Band 50W GaN Power Amplifier MMIC With High Harmonic Rejection – IEEE MAPCON 2023
  • Ku band 35W GaN Power amplifier Design & development with Bus Bar topology- IEEE International conf IESAC-2025
Punna VenkateshwarluRF MMIC Design Engineer